K2055 データシートの表示（PDF） - NEC => Renesas Technology

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K2055

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2055

N-CHANNEL MOS FET

FOR HIGH-SPEED SWITCHING

The 2SK2055 is a N-channel MOS FET of a vertical type and

is a switching element that can be directly driven by the output of

an IC operating at 5 V.

This product has a low ON resistance and superb switching

characteristics and is ideal for driving the actuators and DC/DC

converters.

PACKAGE DIMENSIONS (in mm)

5.7 ±0.1

2.0 ±0.2

1.5 ±0.1

FEATURES

• New package intermediate between small-signal and power

models

• Can be directly driven by output of 5-V IC

• Low ON resistance

RDS(on) = 0.45 Ω MAX. @VGS = 4 V, ID = 1.0 A

RDS(on) = 0.35 Ω MAX. @VGS = 10 V, ID = 1.0 A

S

D

G

0.5 ±0.1

0.85

±0.1

2.1

4.2

0.5 ±0.1

0.4 ±0.05

Marking: NA3

EQUIVALENT CIRCUIT

Drain (D)

Gate (G)

Gate

protection

diode

Internal

diode

Source (S)

PIN CONNECTIONS

S: Source

D: Drain

G: Gate

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

SYMBOL

VDSS

VGSS

ID(DC)

ID(pulse)

PT

Tch

Tstg

VGS = 0

VDS = 0

TEST CONDITIONS

PW ≤ 10 ms,

Duty cycle ≤ 50 %

7.5 cm2 × 0.7 mm, ceramic substrate used

RATING

100

±20

±2.0

±4.0

2.0

150

–55 to +150

UNIT

V

V

A

A

W

˚C

˚C

Document No. D11226EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

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