BSP318S データシートの表示（PDF） - Infineon Technologies

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BSP318S

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Final data

BSP318S

SIPMOS® Small-Signal-Transistor

Features

• N-Channel

• Enhancement mode

• Avalanche rated

• Logic Level

• dv/dt rated

Product Summary

Drain source voltage

VDS

60 V

Drain-Source on-state resistance RDS(on) 0.09 Ω

Continuous drain current

ID

2.6 A

4

Type

BSP318S

Package

SOT-223

Ordering Code

Q67000-S4002

3

2

1

VPS05163

Pin 1 Pin 2, 4 PIN 3

G

D

S

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

Pulsed drain current

TA = 25 °C

Avalanche energy, single pulse

ID = 2.6 A, VDD = 25 V, RGS = 25 Ω

Avalanche current,periodic limited by Tjmax

Avalanche energy, periodic limited by Tjmax

Reverse diode dv/dt

ID

ID puls

EAS

IAR

EAR

dv/dt

IS = 2.6 A, VDS = 20 V, di/dt = 200 A/µs,

Tjmax = 150 °C

Gate source voltage

Power dissipation

TA = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

VGS

Ptot

Tj , Tstg

Value

2.6

10.4

60

2.6

0.18

6

±20

1.8

-55... +150

55/150/56

Unit

A

mJ

A

mJ

kV/µs

V

W

°C

Page 1

1999-10-28

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