IIRFP260M データシートの表示（PDF） - Inchange Semiconductor

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IIRFP260M

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRFP260M，IIRFP260M

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID=250μA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=28A

IGSS

Gate-Source Leakage Current

VGS= ±20V

IDSS

Drain-Source Leakage Current

VDS=200V; VGS= 0V

VSD

Diode forward voltage

IS=28A, VGS = 0V

MIN TYP MAX UNIT

200

V

2.0

4.0

V

40

mΩ

±0.1 μA

25

μA

1.3

V

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