BUY49P データシートの表示（PDF） - Inchange Semiconductor
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BUY49P Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUY49P
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)
·High Current Capability
APPLICATIONS
·Designed for high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
250
V
VCEO Collector-Emitter Voltage
200
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3.0
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
5.0
A
15
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.33 ℃/W
isc Website：www.iscsemi.cn
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