STPS1L40 データシートの表示（PDF） - STMicroelectronics
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STPS1L40 Datasheet PDF : 13 Pages
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Characteristics
STPS1L40
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
40
IF(RMS) Forward rms current
SMA/SMB
8
IF(AV)
Average forward current
δ = 0.5, square wave
SMA/SMB TL = 155 °C
SOD123Flat TL = 160 °C
1
IFSM
Surge non repetitive
forward current
SMA/SMB
tp = 10 ms sinusoidal
SOD123Flat
60
50
PARM
Tstg
Tj
Repetitive peak avalanche power
Storage temperature range
Operating junction temperature range(1)
tp = 10 µs, Tj = 125 °C
65
-65 to +175
-40 to +175
Unit
V
A
A
A
W
°C
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-l) Junction to lead
Table 3: Thermal parameters
Parameter
SMA
SMB
SOD123Flat
Max. value
30
25
20
Unit
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Tj = 25 °C
-
IR(1) Reverse leakage current
VR = VRRM
Tj = 125 °C
-
VF(1) Forward voltage drop
Tj = 25 °C
-
IF = 1 A
Tj = 125 °C
-
Tj = 25 °C
-
IF = 2 A
Tj = 125 °C
-
Typ.
6
0.37
0.50
Max.
35
10
0.50
0.42
0.63
0.61
Unit
µA
mA
V
Notes:
(1)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.23 x IF(AV) + 0.19 x IF2(RMS)
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