BYS11-90 データシートの表示（PDF） - Vishay Semiconductors
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BYS11-90 Datasheet PDF : 4 Pages
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BYS11-90
Vishay General Semiconductor
2.0
VR = 0 V, Half Sine-Wave
1.6
RthJA = 25 K/W
1.2
0.8
125 K/W
0.4
100 K/W
150 K/W
0
0
40
80
120
160
200
Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
2.0
RthJA = 25 K/W
1.6
1.2
100 K/W
0.8
0.4
0
0
VR = VRRM
40
80
120
100
200
Junction Temperature (°C)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
1000
100
VR = VRRM
10
1
0.1
0
40
80
120
160
200
Junction Temperature (°C)
Fig. 4 - Reverse Current vs. Junction Temperature
180
160
140
120
100
80
60
40
20
0
0.1
f = 1 MHz
1
10
100
Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 23-Dec-14
3
Document Number: 86014
For technical questions within your region: DiodessAmericas@vishay.com, DiodessAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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