KSB1151 データシートの表示（PDF） - Fairchild Semiconductor

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KSB1151

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSB1151

Feature

• Low Collector-Emitter Saturation Voltage

• Large Collector Current

• High Power Dissipation : PC=1.3W (Ta=25°C)

• Complement to KSD 1691

1

TO-126

1. Emitter 2.Collector 3.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

IB

Base Current

PC

Collector Dissipation (Ta=25°C)

Collector Dissipation (TC=25°C)

TJ

Junction Temperature

TSTG

Storage Temperature

* PW≤10ms, Duty Cycle≤50%

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

hFE1

hFE2

hFE3

* DC Current Gain

VCE(sat) * Collector-Emitter Saturation Voltage

VBE(sat) * Base-Emitter Saturation Voltage

tON

Turn On Time

tSTG

Storage Time

tF

Fall Time

* Pulse test: PW≤350µs, Duty Cycle≤2% Pulsed

VCB = - 50V, IE = 0

VEB = - 7V, IC = 0

VCE = - 1V, IC = - 0.1A

VCE = - 1V, IC = - 2A

VCE = - 2V, IC = - 5A

IC = - 2A, IB = - 0.2A

IC = - 2A, IB = - 0.2A

VCC = - 10V, IC = - 2A

IB1 = - IB2 =0.2A

RL = 5Ω

hFE Classification

Classification

hFE2

O

100 ~ 200

Y

160 ~ 320

Value

- 60

- 60

-7

-5

-8

-1

1.3

20

150

- 55 ~ 150

Units

V

V

V

A

A

A

W

W

°C

°C

Min.

60

100

50

Typ.

200

- 0.14

- 0.9

0.15

0.78

0.18

Max.

- 10

- 10

400

- 0.3

- 1.2

1

2.5

1

Units

µA

µA

V

V

µs

µs

µs

G

200 ~ 400

©2003 Fairchild Semiconductor Corporation

Rev. B, May 2003

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