KTA1668 データシートの表示（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.

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KTA1668

TRANSISTOR (PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

KTA1668

TRANSISTOR (PNP)

FEATURES

z High voltage: VCEO=-60V

z High transistors frequency

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-1

A

PC

Collector power dissipation

500

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=-0.1mA,IE=0

-80

V

Collector-emitter breakdown voltage

V(BR)CEO IC=-1mA,IB=0

-60

V

Emitter-base breakdown voltage

V(BR)EBO IE=-0.1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-0.1 μA

Emitter cut-off current

IEBO

VEB=-4V,IC=0

-0.1 μA

DC current gain

hFE1

hFE2

VCE=-2V,IC=-50mA

VCE=-2V,IC=-1A

60

200

30

Collector-emitter saturation voltage

VCE(sat) IC=-500mA,IB=-50mA

-0.7

V

Base-emitter saturation voltage

VB E(sat) IC=-500mA,IB=-50mA

-1.2

V

Transition frequency

fT

VCE=-10V,IC=-50mA, f=100MHz

150

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

12

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

O

60-120

JO

Y

100-200

JY

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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