BD676A データシートの表示（PDF） - New Jersey Semiconductor
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BD676A Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, (Jna,
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD676A
DESCRIPTION
• Collector-Emitter Breakdown Voltage—
: V(BR)CEo = -45 V
• DC Current Gain—
: hFE = 750(Min)@lc=-2A
• Complement to Type BD675A
APPLICATIONS
• Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-45
V
Vceo
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-4
A
IB
Base Current
Collector Power Dissipation
PC
TC=25°C
Ti
Junction Temperature
Tstg
Storage Temperature Range
-0.1
A
40
W
150
"C
-55-150
*c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 3.13 "CM/
•
Tz
rL^lL^Ju "• - i-1 *—|%Y
L—VW
=
1•
PIN 1. BETTER
2. COLLECTOR
3. BASE
TO-126 package
t*T^ —»j =r-
IT r
;o t
i
A
-\1
it
!i i
rH -
V
K ~* r~J
i D-*.
•«-R
I-
G r^™
n }' |i '" t ' m
' *•
23
mm
DIM WIN MAX
A 10.70 10.90
B 7.70 7.90
r
2.60 2.30
D 0.66 0.36
F 3.10 3.30
G 4,48 4,88
H 2.00 2.20
J 1.35 1.55
K 16.10 16.30
0 3.70 3.90
R
0.40 0.60
V
1.17 1.37
N.I Senii-C'tuidiictors reserves the right to change tost conditions, parameter limits and package dimension-; without
nuiiee. Information furnished by N.I Semi-Coiuluclors is believed 10be boili accumte and reliable ;il the lime of jjoini:
u> press. ||tiv\c\er, N.I Semi-(.'<inductors assumes itii responsibilil) for an> errors or omissions discovered in its use.
N,l Semi-CiMidticlors enciuira.yes cusiomers lo verify thai ilalaslieets are eiirivnl belt ire- (ihieing orders.
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