BAV756DW データシートの表示（PDF） - Diodes Incorporated.

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BAV756DW

QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

Diodes Incorporated. 

BAV756DW

QUAD SURFACE MOUNT SWITCHING DIODE ARRAY

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Features

Mechanical Data

• Fast Switching Speed

• Ultra-Small Surface Mount Package

• For General Purpose Switching Applications

• High Conductance

• One BAV70 Circuit and One BAW56 Circuit In One Package

• Easily Connected As Full Wave Bridge

• Lead Free/RoHS Compliant (Note 3)

• "Green" Device (Notes 4 and 5)

• Case: SOT-363

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Polarity: See Diagram

• Marking Information: See Page 2

• Ordering Information: See Page 2

• Weight: 0.006 grams (approximate)

SOT-363

C1

A1

C2

TOP VIEW

A1

C2

A2

TOP VIEW

Internal Schematic

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Non-Repetitive Peak Reverse Voltage

VRM

100

V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

75

V

VR

RMS Reverse Voltage

VR(RMS)

53

V

Forward Continuous Current (Notes 1 and 2)

IFM

300

mA

Average Rectified Output Current (Notes 1 and 2)

IO

150

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0s

IFSM

2.0

1.0

A

Thermal Characteristics

Characteristic

Power Dissipation (Notes 1 and 2)

Power Dissipation TS = 60°C (Note 2)

Thermal Resistance Junction to Ambient Air (Notes 1 and 2)

Thermal Resistance Junction to Soldering Point (Note 2)

Operating and Storage Temperature Range

Symbol

PD

PD

RθJA

RθJS

TJ, TSTG

Value

200

300

625

275

-65 to +150

Unit

mW

mW

°C/W

°C/W

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 6)

Forward Voltage

Reverse Current (Note 6)

Total Capacitance

Reverse Recovery Time

Symbol Min

V(BR)R

75

VF

⎯

IR

⎯

CT

⎯

trr

⎯

Max

⎯

0.715

0.855

1.0

1.25

2.5

50

30

25

2.0

4.0

Unit

V

V

μA

μA

μA

nA

pF

ns

Test Condition

IR = 2.5μA

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

VR = 75V

VR = 75V, TJ = 150°C

VR = 25V, TJ = 150°C

VR = 20V

VR = 0, f = 1.0MHz

IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100Ω

Notes: 1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at

http://www.diodes.com/datasheets/ap02001.pdf.

2. One or more diodes loaded.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

6. Short duration pulse test used to minimize self-heating effect.

BAV756DW

Document number: DS30148 Rev. 9 - 2

1 of 3

www.diodes.com

April 2008

© Diodes Incorporated

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