2SB1371 データシートの表示（PDF） - New Jersey Semiconductor
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2SB1371 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SB1371
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat) Collector-Emitter Saturation Voltage !c= -4A; IB= -0.4A
VsE(on) Base -Emitter On Voltage
lc= -4A; VCE= -5V
ICBO
Collector Cutoff Current
Vce=-120V; lg= 0
IEBO
Emitter Cutoff Current
VEB= -3V; lc= 0
hFE-i
DC Current Gain
lc= -20mA; VCE= -5V
hpE-2
DC Current Gain
lc= -1A; VCE= -5V
hfS.3
DC Current Gain
|c= -4A; VCE= -5V
fy
Current-Gain—Bandwidth Product lc=-0.5A;VCE=-5V;f=1MHz
COB
Output Capacitance
lE=0;VCB=-10V;f= 1MHz
MIN TYP. MAX UNIT
-2.0
V
-1.8
V
-50 M A
-50 M A
1
20
60
200
20
15
MHz
150
PF
• hFE ^Classifications
Q
S
P
60-120 80-160 100-200
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