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IXFH8N80 データシートの表示(PDF) - IXYS CORPORATION

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IXFH8N80
IXYS
IXYS CORPORATION 
IXFH8N80 Datasheet PDF : 4 Pages
1 2 3 4
Preliminary Data Sheet
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on)
trr
IXFH8N80 800V 8A
IXFH9N80 800V 9A
1.1250 ns
0.9250 ns
TO-247 AD (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
800
V
800
V
±20
V
±30
V
TC = 25°C
8N80
8
A
9N80
9
A
TC = 25°C, pulse width limited by TJM
8N80 32
A
9N80 36
A
TC = 25°C
8N80
8
A
9N80
9
A
EAR
dv/dt
PD
TJ
TJM
Tstg
Md
Weight
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
Mounting torque
18
mJ
5 V/ns
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
VDSS temperature coefficient
VDS = VGS, ID = 2.5 mA
VGS(th) temperature coefficient
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t 300 µs, duty cycle δ ≤ 2%
800
0.088
2
-0.257
V
%/K
4.5 V
%/K
±100 nA
250 µA
1 mA
8N80
9N80
1.1
0.9
© 1997 IXYS All rights reserved
TO-247 SMD*
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
*Add suffix letter "S" for surface mountable
package
Features
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
96527A (8/97)

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