BC857S データシートの表示（PDF） - Fairchild Semiconductor
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BC857S Datasheet PDF : 5 Pages
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PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
0.8
- 40 °C
0.6
25 °C
125 °C
0.4
0.2
0
0.1
1
10
100 300
I C - COLLECTOR CURRE NT (mA)
Collector-Cutoff Current
vs Ambient Temperature
100
V CB = 50V
10
1
0.1
0.01
25
50
75
100
125
TA - AMBIE NT TEMP ERATURE (°C)
Collector Saturation Region
4
Ta = 25°C
3
2 Ic =
100 uA
50 mA
300 mA
1
0
100 300 700 2000 4000
IB - BASE CURRENT (uA)
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40°C
0.6
25 °C
125 °C
0.4
0.2
VCE = 5V
0
0.1
1
10
100 200
I C - COLLECTOR CURRE NT (mA)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
95
90
85
80
75
70
0.1
1
10
100
1000
RESISTANCE (kΩ)
Input and Output Capacitance
vs Reverse Voltage
100
f = 1.0 MHz
10
Cib
Cob
0.1
1
10
100
VCE - COLLECTOR VOLTAGE (V)
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