BDX62 データシートの表示（PDF） - New Jersey Semiconductor
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BDX62 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
BDX62/A/B/C
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX62
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDX62A
BDX62B
lc=-100mA;lB=0
BDX62C
VcE(sat) Collector-Emitter Saturation Voltage lc=-3A;lB=-12mA
VeE(on) Base-Emitter On Voltage
lc= -3A ; VCE= -3V
ICEO
Collector Cutoff Current
VCE= V2VcEo; le= 0
ICBO
Collector Cutoff Current
VCB= VcBOmaxjlE11 0
BDX62
VCB= -40V;IE= 0;Tj= 200 "C
BDX62A VCB= -50V;IE= 0;Tj= 200 'C
ICBO
Collector Cutoff Current
BDX62B VCB= -60V; IE= 0;Tj= 200 'C
BDX62C VCB= -70V;IE= 0;Tj= 200 r
IEBO
Emitter Cutoff Current
VEB= -5V; lc=0
hpE-1
DC Current Gain
lc= -0.5A ; VCE= -3V
hFE-2
DC Current Gain
lc= -3A ; VCE= -3V
hFE-3
DC Current Gain
lc=-8A;V0E=-3V
COB
Output Capacitance
|E=0;VCB=-10V;ftest=1MHz
Switching times
ton
Turn-on Time
toff
Turn-off Time
lc=-3A; lBi=-lB2=-12mA
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2
V
-2.5 V
-0.2 mA
-0.2 mA
-2
mA
-5
mA
1500
1000
750
100
PF
0.5
us
2.5
|i S
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