BUK98150-55A(2007) データシートの表示（PDF） - NXP Semiconductors.
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BUK98150-55A Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK98150-55A
N-channel TrenchMOS logic level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
BUK98150-55A SC-73
Description
plastic surface-mounted package with increased heatsink; 4 leads
4. Limiting values
Version
SOT223
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
RGS = 20 kΩ
Tsp = 25 °C; VGS = 5 V; see Figure 2 and 3
Tsp = 100 °C; VGS = 5 V; see Figure 2
Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
Tsp = 25 °C; see Figure 1
IDR
reverse drain current
IDRM
peak reverse drain current
Avalanche ruggedness
Tsp = 25 °C
Tsp = 25 °C; pulsed; tp ≤ 10 µs
EDS(AL)S
EDS(AL)R
non-repetitive drain-source avalanche
energy
repetitive drain-source avalanche
energy
unclamped inductive load; ID = 5.5 A;
VDS ≤ 55 V; RGS = 50 Ω; VGS = 5 V; starting at
Tj = 25 °C
Min Max Unit
- 55 V
- 55 V
- ±15 V
- 5.5 A
-3
A
- 22 A
-8
W
−55 +150 °C
−55 +150 °C
- 5.5 A
- 22 A
- 22 mJ
[1] -
-
J
[1] Conditions:
a) Value not quoted. Repetitive rating defined in Figure 16.
b) Single-pulse avalanche rating limited by Tj(max) of 150 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 145 °C.
d) Refer to application note AN10273 for further information.
BUK98150-55A_4
Product data sheet
Rev. 04 — 11 June 2007
© NXP B.V. 2007. All rights reserved.
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