2SB1322A データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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2SB1322A

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SB1322A

2SB1322A TRANSISTOR (PNP)

D FEATURES

Power dissipation

T PCM:

1 W (Tamb=25℃)

.,L Collector current

ICM:

-1 A

Collector-base voltage

O V(BR)CBO:

-60 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

Collector-base breakdown voltage

O Collector-emitter breakdown voltage

R Emitter-base breakdown voltage

T Collector cut-off current

Emitter cut-off current

EC DC current gain

L Collector-emitter saturation voltage

E Base-emitter saturation voltage

Transition frequency

J Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE(sat)

fT

Cob

Test conditions

Ic=-10µA, IE=0

Ic=-2mA, IB=0

IE=-10µA, IC=0

VCB=-20V, IE=0

VEB=-5V, IC=0

VCE=-10V, IC=-0.5A

VCE=-5V, IC=-1A

IC=-0.5A, IB=-50mA

IC=-0.5A, IB=-50mA

VCE=-10V, IC=-50mA

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-60

V

-50

V

-5

V

-0.1 µA

-0.1 µA

85

340

50

-0.4 V

-1.2 V

200

MHz

30

pF

WECLASSIFICATION OF hFE(1)

Rank

Q

R

S

Range

85-170

120-240

170-340

Marking

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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