2SB1070 データシートの表示（PDF） - Panasonic Corporation
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2SB1070 Datasheet PDF : 4 Pages
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Power Transistors
2SB1070, 2SB1070A
Silicon PNP epitaxial planar type
For low-voltage switching
■ Features
• Low collector-emitter saturation voltage VCE(sat)
• High-speed switching
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SB1070 VCBO
−40
V
(Emitter open)
2SB1070A
−50
Collector-emitter voltage 2SB1070 VCEO
−20
V
(Base open)
2SB1070A
−40
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−4
A
Peak collector current
ICP
−8
A
Collector power dissipation
PC
25
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0) 1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB1070 VCEO IC = −10 mA, IB = 0
−20
V
(Base open)
2SB1070A
−40
Collector-base cutoff
current (Emitter open)
2SB1070 ICBO
2SB1070A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Base-emitter saturation voltage
Collector-emitter saturation voltage
IEBO
hFE1
hFE2 *
VBE(sat)
VCE(sat)
Transition frequency
fT
Turn-on time
ton
Storage time
tstg
Fall time
tf
VCB = −40 V, IE = 0
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −1 A
IC = −2 A, IB = − 0.1 A
IC = −2 A, IB = − 0.1 A
VCE = −5 V, IC = − 0.5 A, f = 10 MHz
IC = −2 A
IB1 = − 0.2 A, IB2 = 0.2 A
VCC = −20 V
−50 µA
−50
−50 µA
45
90
260
−1.5
V
− 0.5 V
150
MHz
0.3
µs
0.4
µs
0.1
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180 130 to 260
Publication date: February 2003
SJD00040AED
1
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