2SB1227 データシートの表示（PDF） - New Jersey Semiconductor
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2SB1227 Datasheet PDF : 2 Pages
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^£.mi-C.onaiLckor
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.,
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1227
DESCRIPTION
• High DC Current Gain-
: hFE= 1500(Min)@ (VCE= -3V,lc= -2-.5A)
• Large Current Capability and Wide ASO.
• Complement to Type 2SD1829
APPLICATIONS
• Designed for use in control of motor drivers, printer
hammer drivers, and constant-voltage regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCDO
Collector-Base Voltage
-110
V
VCEO ^Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
Ic
Collector Current-Continuous
-5
A
" ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25(
c
Collector Power Dissipation
@TC=25 C
T.I - Junction Temperature
-8
A
2
25
150
C
Tstg
Storage Temperature
-55-150
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JIM MIN
A 14.95
B 10.00
r 4.40
D 0.75
F 3.10
H 3.70
0.50
K 13.4
L 1.10
N 5.00
0 2,70
R 2.20
S 2.65
I 6.40
MAX
15.05
10.10
4.60
0.30
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
NJ Scmi-Couductors reserves the right to change test conditions, parameter limits and package dimensions without
nonce. Inlwirmtion
u> press. I luwever.
furnished by NJ Semi-Conductors is believed to be
NJ Semi-CtmiliicUirs iissumcs no re.sponsi|-iilil\r nn>
hoth accurate and reliable ;H the lime
errors or omissions discoveivd in its
uosfeac. ooiinn'ug
NM Senii-foiklutlors encoiira.nes ciislomers to verify ihul Jiitasheels are aii-rvnl Ivlorc placiiiy orders.
Qualiry Semi-Conductors
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