2SB1227 データシートの表示（PDF） - New Jersey Semiconductor
部品番号
コンポーネント説明
メーカー
2SB1227 Datasheet PDF : 2 Pages
| |||
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VjBRCEO Collector-Emitter Breakdown Voltage lc= -50mA; RBE= ™
V|BR:CBO Collector-Base Breakdown Voltage '• lc= -5mA; IE= 0
VcE(sat) Collector-Emitter SaturationVoltage
lc= -2.5A; IB= -5mA
VBE(sat) Base-Emitter Saturation Voltage
lc= -2.5A; IB= -5mA
ICBO
Collector Cutoff Current
Vco= -80V: h= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
HFE
DC Current Gain
lc= -2.5A; VCE= -3V
fi
Current-Gain—Bandwidth Product
lc=-2.5A;VCE=-5V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= -2A, IB1= -lB2= -4mA,
Vcc= -50V; RL= 250
2SB1227
WIN TYP. MAX UNIT
-100
V
-110
V
-1.5
V
-2.0
V
-100 M A
-30
mA
1500
20
MHz
0.7
us
1.3
us
1.5
Vs
Share Link: 