2SB1507 データシートの表示（PDF） - New Jersey Semiconductor
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2SB1507 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-1mA; RBE= °°
V(BR)CBO Collector-Base Breakdown Voltage
lc=-1mA;lE=0
V(BR)EBO Emitter-Base Breakdown Voltage
lE=-1mA;lc=0
VcE(sat) Collector-Emitter Saturation Voltage
|c= -4A; IB= -0.4A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; lc= 0
hpE-1
DC Current Gain
lc=-1A; VCe=-2V
hFE-2
DC Current Gain
lc= -5A; VCE= -2V
fr
Current-Gain—Bandwidth Product
lc=-1A;VCE=-5V
Switching Times
ton
Turn-on Time
lstg
Storage Time
tf
Fall Time
lc=-2A; RL=10Q,
IB1= -\B2= -0.2A, Vcc= -20V
hpE-1 Classifications
Q
R
S
70-140 100-200 140-280
2SB1507
MIN TYP. MAX UNIT
-50
V
-60
V
-6
V
-0.4 V
-100 nA
-100 n A
70
280
30
10
MHz
0.2
fS
0.7
us
0.1
US
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