HSM198S データシートの表示（PDF） - Renesas Electronics

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HSM198S

Silicon Schottky Barrier Diode for Various Detector

Renesas Electronics 

HSM198S

Absolute Maximum Ratings

Item

Reverse voltage

Average forward current

Junction temperature

Storage temperature

Note: 1. Two device total

VR

IO *1

Tj

Tstg

Symbol

Value

10

30

125

−55 to +125

(Ta = 25°C)

Unit

V

mA

°C

°C

Electrical Characteristics *1

Item

Symbol Min

Typ

Forward voltage

VF

—

—

Forward current

IF

4.5

—

Reverse current

IR

—

—

Capacitance

C

—

—

Capacitance deviation ∆VF

ESD Capability *2

—

—

—

30

—

Notes: 1. Per one device

2. Failure Criterrion; IR > 140 µA at VR = 6 V

(Ta = 25°C)

Max

Unit

Test Condition

1.1

V

IF = 5 mA

—

mA VF = 1 V

70

µA VR = 6 V

1.5

pF VR = 1 V, f = 1 MHz

10

mV IF = 5 mA

—

V

C = 200 pF, R = 0 Ω, Both forward

and reverse direction 1 pulse

Rev.4.00 Apr 25, 2005 page 2 of 4

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