BB814 データシートの表示（PDF） - Infineon Technologies

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BB814

Silicon Variable Capacitance Diodes

Infineon Technologies 

BB814...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Reverse current

VR = 16 V

VR = 16 V, TA = 60 °C

IR

nA

-

-

20

-

- 200

AC Characteristics

Diode capacitance1)

VR = 2 V, f = 1 MHz

VR = 8 V, f = 1 MHz

Capacitance ratio

VR = 2 V, VR = 8 V, f = 1 MHz

Capacitance matching2)

VR = 2 V, VR = 8 V, f = 1 MHz

Series resistance

VR = 2 V, f = 100 MHz

Q factor

CT

CT2/CT8

∆CT/CT

rS

Q

43

19.1

2.05

44.75

20.8

2.15

pF

46.5

22.7

2.25

-

-

3%

- 0.18 - Ω

-

200

-

f = 100 MHz, VR = 2 V

1Capacitance groups at 2V and 8V, coded 1; 2

CT/groups

1

2

C2V min

43pF 44.5pF

C2V max

45pF 46.5pF

C8V min

19.1pF 19.75pF

C8V max

21.95pF 22.7pF

2For details please refer to Application Note 047.

2

2011-06-15

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