FDMS86300 データシートの表示（PDF） - ON Semiconductor
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FDMS86300 Datasheet PDF : 9 Pages
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FDMS86300
N-Channel PowerTrench® MOSFET
80 V, 122 A, 3.9 mΩ
Features
Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A
Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
December 2015
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
OringFET / Load Switching
DC-DC Conversion
Top
Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
Power 56
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
2S
1S
Ratings
80
±20
122
78
19
556
252
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.2
(Note 1a)
50
°C/W
Device Marking
FDMS86300
Device
FDMS86300
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
1
FDMS86300 Rev.1.4
www.fairchildsemi.com
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