FDMS86300 データシートの表示（PDF） - ON Semiconductor
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FDMS86300 Datasheet PDF : 9 Pages
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Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 19 A
8
6
VDD = 40 V
VDD = 30 V
VDD = 50 V
4
2
0
0 10 20 30 40 50 60 70 80
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
1000
Ciss
Coss
100
10
Crss
f = 1 MHz
VGS = 0 V
1
0.1
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
100
140
TJ = 25 oC
TJ = 100 oC
10
TJ = 125 oC
1
0.01
0.1
1
10
100 500
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
1000
100
10 μs
10 THIS AREA IS
LIMITED BY rDS(on)
100 μs
SINGLE PULSE
1 TJ = MAX RATED
RθJC = 1.2 oC/W CURVE BENT TO
TC = 25 oC
MEASURED DATA
0.1
0.1
1
10
1 ms
10 ms
100 ms/DC
100
500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
105
VGS = 10 V
70
VGS = 6 V
35
RθJC = 1.2 oC/W
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
20000
10000
SINGLE PULSE
RθJC = 1.2 oC/W
TC = 25 oC
1000
100
50
10-5
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
4
FDMS86300 Rev.1.4
www.fairchildsemi.com
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