TP3032 データシートの表示（PDF） - Motorola => Freescale

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TP3032

NPN Silicon RF Power Transistor

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 26 V, IE = 0, f = 1 MHz )

Cob

—

30

—

pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Gain

(VCC = 26 V, Pout = 21 W, ICQ = 100 mA, f = 960 MHz)

Gp

7.5

8.5

—

dB

Load Mismatch

ψ

(VCC = 26 V, Pout = 21 W, ICQ = 100 mA, Load VSWR = 5:1, at

All Phase Angles at Frequency of Test)

No Degradation in Output Power

Collector Efficiency

(VCC = 26 V, Pout = 21 W, f = 960 MHz)

η

50

55

—

%

Over Drive

(VCC = 26 V, Pin = 6 W, f = 960 MHz)

OD

No Degradation in Output Power

f = 860 MHz

Zin

980

f = 860 MHz

ZOL*

980

Zo = 10 Ω

TP3032

2

f

(MHz)

VCE = 26 V

Zin

(Ω)

Pout = 21 W

ZOL*

(Ω)

860

2.9 – j0.4

2 + j2.2

880

2.9 – j0.9

900

2.9 – j1.45

935

3.2 – j0.95

2.1 + j2.2

2.25 + j2.5

2.4 + j2.3

960

3.25 – j1.5

2.5 + j2

980

3.55 – j1.1

2.6 + j2.15

ZOL* = Conjugate of optimum load impedance

ZOL* = into which the device operates at a given

ZOL* = output power, voltage, current and frequency.

Figure 1. Series Equivalent Input and Output Impedances

MOTOROLA RF DEVICE DATA

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