HEF4104BT(2016) データシートの表示（PDF） - NXP Semiconductors.

部品番号

コンポーネント説明

メーカー

HEF4104BT
(Rev.:2016)

Quad low-to-high voltage translator with 3-state outputs

NXP Semiconductors. 

Nexperia

HEF4104B

Quad low-to-high voltage translator with 3-state outputs

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to VSS = 0 V (ground).

Symbol Parameter

Conditions

Min

Max Unit

VDD(A)

VDD(B)

IIK

VI

IOK

II/O

IDD

Tstg

Tamb

Ptot

supply voltage A

supply voltage B

input clamping current

input voltage

output clamping current

input/output current

supply current

storage temperature

ambient temperature

total power dissipation

port A; VDD(A)  VDD(B)

port B; VDD(B)  VDD(A)

VI < 0.5 V or VI > VDD(A) + 0.5 V

VO < 0.5 V or VO > VDD(B) + 0.5 V

Tamb = 40 C to +85 C

SO16

0.5

0.5

-

0.5

-

-

[1]

-

65

40

[2]

-

+18

V

+18

V

10

mA

VDD(A) + 0.5 V

10

mA

10

mA

50

mA

+150 C

+85

C

500

mW

P

power dissipation

per output

-

100

mW

[1] IDD is the combined current of IDD(A) and IDD(B).

[2] For SO16 packages: above Tamb = 70 C, Ptot derates linearly at 8 mW/K.

8. Recommended operating conditions

Table 5.

Symbol

VDD(A)

VDD(B)

VI

Tamb

t/V

Recommended operating conditions

Parameter

Conditions

supply voltage A

supply voltage B

input voltage

ambient temperature

in free air

input transition rise and fall rate

VDD(A) = 5 V

VDD(A) = 10 V

VDD(A) = 15 V

Min

Typ

Max Unit

3

-

 VDD(B) V

 VDD(A)

-

15 V

0

-

VDD(A) V

40

-

+85 C

-

-

3.75 s/V

-

-

0.5 s/V

-

-

0.08 s/V

HEF4104B

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 9 — 29 March 2016

© Nexperia B.V. 2017. All rights reserved

4 of 14

Share Link: