BU323 データシートの表示（PDF） - Inchange Semiconductor
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BU323 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon Darlington NPN Power Transistor
isc Product Specification
BU323
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 350V(Min.)
·High Reliability
APPLICATIONS
·Automotive ignition
·Switching regulator
·Motor control applications
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current-Peak
16
A
IBB
Base Current
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
3
A
175
W
200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.0 ℃/W
isc Website：www.iscsemi.cn
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