BU323 データシートの表示（PDF） - Inchange Semiconductor

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BU323

Silicon Darlington NPN Power Transist

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon Darlington NPN Power Transistor

isc Product Specification

BU323

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 10mH

350

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 60mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6 A; IB= 120mA

VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB=B 300mA

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 6 A; IB= 120mA

VBE(sat)-2 Base-Emitter Saturation Voltage

IC= 10 A; IB=B 300mA

VBE(on) Base-Emitter On Voltage

IC= 10A ; VCE= 6V

ICER

Collector Cutoff Current

VCER= RatedVCER;RBE= 100Ω

1.5

V

1.7

V

2.7

V

2.2

V

3.0

V

2.5

V

1.0 mA

ICBO

Collector Cutoff Current

VCB= RatedVCBO; IE= 0

1.0 mA

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

40

mA

hFE-1

DC Current Gain

IC= 3A; VCE= 6V

300

hFE-2

DC Current Gain

IC= 6A; VCE= 6V

150

2000

hFE-3

DC Current Gain

IC= 10A; VCE= 6V

50

VECF

C-E Diode Forward Voltage

IF= 10A

3.5

V

COB

Output Capacitance

IE= 0; VCB= 10V; f= 100kHz

165

pF

Switching Times

ts

Storage Time

tf

Fall Time

VCC= 12V; IC= 6A,

IB1= -IB2= 0.3A

15

μs

15

μs

isc Website：www.iscsemi.cn

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