KSB1149 データシートの表示（PDF） - Fairchild Semiconductor
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KSB1149 Datasheet PDF : 4 Pages
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Typical Characteristics
-5
IB=-900uA
I B=-1mA
-4
IB=-800uA
IB=-700uA
-3
IB=-600uA
-2
IB=-500uA
IB=-400uA
IB=-300uA
IB=-200uA
IB=-100uA
-1
-0
-0
-1
-2
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-100
Ic = 1000 IB
Pulsed
-10
VBE(sat)
-1
VCE(sat)
-0.1
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
160
140
120
100
80
60
40
20
sD/bISLSIIMPAITTEIODN LIMITED
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
©2000 Fairchild Semiconductor International
100000
10000
VCE = -2V
Pulsed
1000
100
-0.01
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
-10
Ic(Pulse)
Ic(DC)
-1
Dissipation20L0imm1s0itmeds
-0.1
Tc=25oC
Single Pulse
-0.01
-1
-10
-100
500
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Forward Bias Safe Operating Area
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000
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