BST52 データシートの表示（PDF） - Galaxy Semi-Conductor
部品番号
コンポーネント説明
メーカー
BST52 Datasheet PDF : 3 Pages
| |||
Production specification
NPN Darlington Transistor
BST50;BST51;BST52
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Transition frequency
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
fT
VBE=0,VCE=45V
BST50
VBE=0,VCE=60V
BST51
VBE=0,VCE=80V
BST52
VEB=4V,IC=0
VCE=10V,IC=150mA
VCE=10V,IC=500mA
IC=500mA, IB=0.5mA
IC=500mA, IB=0.5mA,Tj=150℃
IC=500mA, IB=0.5mA
VCE=5V,IC=500mA,
f=100MHz
1000
2000
50 nA
50 nA
50 nA
50 nA
1.3
V
1.9
V
200
MHz
Turn-on Time
Turn-off Time
ton
ICon=500mA,IBon=0.5mA,
toff
IBoff=-0.5mA
400
ns
1500
ns
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
E073
Rev.A
www.gmicroelec.com
2
Share Link: 