BB305M データシートの表示（PDF） - Renesas Electronics
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BB305M Datasheet PDF : 10 Pages
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BB305M
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Ratings
12
+10
–0
±10
25
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Drain current
Forward transfer admittance
Power gain
Noise figure
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
V(BR)DSS
V(BR)G1SS
V(BR)G2SS
IG1SS
IG2SS
VG1S(off)
12
+10
±10
—
—
0.4
—
—
—
—
—
—
— +100
— ±100
—
1.0
VG2S(off)
0.4
—
1.0
Ciss
Coss
Crss
2.3
2.8
3.5
1.1
1.5
1.9
— 0.017 0.04
V
ID = 200 µA, VG1S = VG2S = 0
V
IG1 = +10 µA, VG2S = VDS = 0
V
IG2 = ±10 µA, VG1S = VDS = 0
nA VG1S = +9 V, VG2S = VDS = 0
nA VG2S = ±9 V, VG1S = VDS = 0
V
VDS = 5 V, VG2S = 4 V
ID = 100 µA
V
VDS = 5 V, VG1S = 5 V
ID = 100 µA
pF VDS = 5 V, VG1 = 5 V
pF VG2S =4 V, RG = 82 kΩ
pF f = 1 MHz
ID(op) 1
10
15
20
mA VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 82 kΩ
ID(op) 2
—
13
—
mA VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 220 kΩ
|yfs|1
23
28
—
mS VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG =82 kΩ, f = 1 kHz
|yfs|2
—
28
—
mS VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 220 kΩ, f = 1 kHz
PG1
24
28
—
dB VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 82 kΩ, f = 200 MHz
PG2
—
28
—
dB VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 220 kΩ, f = 200 MHz
NF1
—
1.4
1.9
dB VDS = 5 V, VG1 = 5 V, VG2S = 4 V
RG = 82 kΩ, f = 200 MHz
NF2
—
1.4
—
dB VDS = 9 V, VG1 = 9 V, VG2S = 6 V
RG = 220 kΩ, f = 200 MHz
Rev.6.00 Aug 10, 2005 page 2 of 9
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