BDX85 データシートの表示（PDF） - New Jersey Semiconductor

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BDX85

Silicon NPN Darlington Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Una.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon NPN Darlington Power Transistor

BDX85/A/B/C

DESCRIPTION

• High DC Current Gain-

: hFE= 750(Min)@ lc= 3A

• Collector-Emitter Sustaining Voltage-

: VCEo(sus)= 45V(Min)- BDX85; 60V(Min)- BDX85A

SOV(Min)- BDX85B; 100V(Min)- BDX85C

• Complement to Type BDX86/A/B/C

APPLICATIONS

• Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25C)

SYMBOL

PARAMETER

VALUE

BDX85

45

UNIT

BDX85A

60

VCBO Collector-Base Voltage

V

BDX85B

80

BDX85C

100

BDX85

45

BDX85A

60

VCEO

Collector-Emitter Voltage

V

BDX85B

80

BDX85C

100

VEBO

Ic

I CM

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

5

V

10

A

15

A

IB

Base Current

Collector Power Dissipation

PC

@ TC=25'C

Tj

Junction Temperature

100

mA

100

W

200

°C

Tstg

Storage Temperature Range

-65-200 "C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance.Junction to Case

Quality Semi-Conductors

MAX UNIT

1.75 'C/W

PIN

1.BASE

2.BU1inER

3. COLLECT OR (CASE)

TO-3 package

< r' -N-i' r1

I

IK

UL \ B

-? 1

11)111

DIM

»««.»

PPHI

MAX

A

3900

B 25,30 26.67

C

7.30 8.30

D

0.90 1,10

E

t.40 1,60

£

10.92

H

546

K 11 40 13,50

L 1675 1705

N 1940 1962

0

U

400

Xi 00

•»42a0r

V 4,30 *5Q

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