BD644 データシートの表示（PDF） - New Jersey Semiconductor
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BD644 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
BD644
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VoEO(SUS) Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
VcE(satH Collector-Emitter Saturation Voltage lc=-3A; lB=-12mA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= -5A; IB= -50mA
VeE(sat) Base-Emitter Saturation Voltage
lc= -5A; IB= -50mA
VeE(on) Base-Emitter On Voltage
lc= -3A ; VCE= -3V
ICBO
Collector Cutoff Current
VCB= -45V; IE= 0
VCB=-30V; lE=0;Tc=150'C
ICEO
Collector Cutoff Current
VCE= -25V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hFE
DC Current Gain
lc= -3A ; VCE= -3V
MIN TYP. MAX UNIT
-45
V
-2.0
V
-2.5
V
-3.0
V
-2.5
V
-0.2
mA
-2.0
-0.5
mA
-5
mA
750
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