BDX83 データシートの表示（PDF） - New Jersey Semiconductor
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BDX83 Datasheet PDF : 2 Pages
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'Isiizu ^s-mi-donduckot ^Pioducti, One.
CX
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDX83/A/B/C
DESCRIPTION
• High DC Current Gain-
: hFE= 1000(Min)@lc=5A
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 45V(Min)- BDX83; 60V(Min)- BDX83A
80V(Min)- BDX83B; 100V(Min)- BDX83C
APPLICATIONS
• Power switching
• Hammer drivers
• Series and shunt regulators
• Audio amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
BDX83
45
UNIT
BDX83A
60
VCBO Collector-Base Voltage
V
BDX83B
80
BDX83C
100
BDX83
45
BDX83A
60
VCEO
Collector-Emitter Voltage
V
BDX83B
80
BDX83C
100
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
250
mA
125
W
200
"C
-65-200 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance.Junction to Case
Quality Semi-Conductors
MAX UNIT
1.4 °c/w
•3
^ "^ i
'—*w—' -»A/v- I [
HI
R? 1,2
PIU
1.BASE
I.aiiTTER
3. COLLECT OR (CASE)
TO-3 package
4
h*"~ N~^*|
,\
1
c
I 1E
!:
-4U-D JPL
h—u-H
V~
t"-L-*l /
"X )/* d)^N / ^ t
% j^^-/$
1c ,
B
1
V.-ga
Mill)
DIM tm MAX
A
3900
B 25.30 36.67
C
7,80 8.30
D
0.90 MO
E
t .40 1 .60
£
1092
H
S46
K 1140 1350
L 1675 17X15
H 1940 1962
Q
4.00 420
U 30.00 3020
V
*30 450
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