BDX86A データシートの表示（PDF） - New Jersey Semiconductor

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BDX86A

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One..

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon PNP Darlington Power Transistor

BDX86/A/B/C

DESCRIPTION

• High DC Current Gain-

: hFE= 750(Min)@ lc= -3A

• Collector-Emitter Sustaining Voltage-

: VCEO(sus)= -45V(Min)- BDX86; -60V(Min)- BDX86A

-SOV(Min)- BDX86B; -100V(Min)- BDX86C

• Complement to Type BDX85/A/B/C

APPLICATIONS

• Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25x:)

SYMBOL

PARAMETER

VALUE

BDX86

-45

UNIT

BDX86A

-60

VCBO

Collector-Base Voltage

V

BDX86B

-80

BDX86C -100

BDX86

-45

BDX86A

-60

VCEO

Collector-Emitter Voltage

V

BDX86B

-80

BDX86C -100

VEBO

Ic

I CM

IB

PC

Tj

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

Collector Power Dissipation

@ TC=25'C

Junction Temperature

-5

V

-10

A

-15

A

-100

mA

100

W

200

"C

Tstg

Storage Temperature Range

-65-200 'C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance.Junction to Case

Quality Semi-Conductors

MAX UNIT

1.75 "CM/

PIN

1.BASE

2. EMITTER

3. COLLECT OR (CASE)

TO-3 package

4,

JT

iran

CUM NUN MAX

A

39 XO

B 25,30 26.67

c

7.80

8.30

D

0.90 1 10

£

1.40 1.60

$

10.92

H

546

K 11 40 13.50

L 16.75 1F.05

N 1940 1962

g

400 420

u 3000 3020

V

430 450

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