BDY28 データシートの表示（PDF） - New Jersey Semiconductor
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BDY28 Datasheet PDF : 2 Pages
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<^£.mi-(lona\jLctoi L/^ioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDY28
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min.)
• Collector-Emitter Saturation Voltage-
: VCE(sa,)= 0.6V(Max)@ lc = 2A •.
• High Switching Speed
APPLICATIONS
• Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
i?
3
PIN
1.BASE
2.BU1ITTER
3. COLLECT OR (CASE)
2
TO-3 package
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
10
V
lc
Collector Current-Continuous
6
A
IB
Base Current
3
A
PC
Collector Power Dissipation@Tc=25°C 87.5
W
Tj
Junction Temperature
200
'C
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance.Junction to Case
MAX UNIT
2.0 r/w
*>
ri 1 i
-Jk-D i PL
\
Cu;
V-.
*— U —*
(-L-*
ran
/S'T^\— / 1 •$ t
"fe~
iB
t
' 1 ?
C
\M^ s
f
-BQ
nun
MIN MAX
A
3900
B 2530 2667
£
7.30
8.30
D
0.90
1.10
E
1,40
1,60
(j
10S2
H
546
K 11.40 1350
L 1675 1705
N 19,40 1962
go
4.00 420
3000 3020
V
430 450
NJ Serni-Conductors reserves the right to changelest conditions, parameter limits and package dimensions without
notiee. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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