BLV194 データシートの表示（PDF） - Philips Electronics
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BLV194 Datasheet PDF : 11 Pages
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Philips Semiconductors
UHF power transistor
Product specification
BLV194
APPLICATION INFORMATION
RF performance at Th = 25 °C in a common emitter test circuit.
Rth j-mb = 0.4 K/W.
MODE OF
f
VCE
ICQ
PL
GP
ηC
OPERATION
(MHz)
(V)
(mA)
(W)
(dB)
(%)
CW, class-AB
900
12.5
10
16
≥7
≥ 50
typ. 8.5
typ. 57
16
handbook, halfpage
Gp
(dB)
12
Gp
8
η
4
MRC096
80
η
(%)
60
40
20
0
0
0
4
8
12
16
20
PL (W)
Class-AB operation: ICQ = 10 mA; VCE = 12.5 V;
f = 900 MHz.
Fig.6 Power gain and efficiency as functions of
load power, typical values.
20
handbook, halfpage
PL
(W)
16
MRC101
12
8
4
0
0
1
2
3
4
PIN (W)
Class-AB operation: ICQ = 10 mA; VCE = 12.5 V;
f = 900 MHz.
Fig.7 Load power as a function of input power,
typical values.
Ruggedness in class-AB operation
The BLV194 is capable of withstanding a load mismatch
corresponding to VSWR = 20:1 through all phases at
rated output power under the following conditions:
VCE = 15.5 V; Th = 25 °C; Rth j-mb = 0.4 K/W; f = 900 MHz.
January 1993
5
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