BLV10 データシートの表示（PDF） - New Jersey Semiconductor

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BLV10

VHP power transistor

New Jersey Semiconductor 

VHP power transistor

THERMAL RESISTANCE

(dissipation = 8 W; Tmb = 72,4 °C, i.e. Th = 70 °C)

From junction to mounting base (d.c. dissipation)

From junction to mounting base (r.f. dissipation)

From mounting base to heatsink

CHARACTERISTICS

Collector-emitter breakdown voltage

VBE = 0; lc = 5 mA

Collector-emitter breakdown voltage

open base; lc = 25 mA

Emitter-base breakdown voltage

open collector; IE = 1 mA

Collector cut-off current

VBE = 0 ; V c E = 1 8 V

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

RBE = 1011

D.C. current gain'1)

lc = 0,75 A; VCE = 5 V

Collector-emitter saturation voltage'1)

IC = 2 A ; I B = 0,4A

Transition frequency at f = 100 MHz'1)

-IE = 0,75 A; VCB = 13,5V

-IE = 2 A; VCB = 13,5V

Collector capacitance at f = 1 MHz

IE = le = 0; VCB = 13,5V

Feedback capacitance at f = 1 MHz

lc = 100 mA; VCE = 13,5V

Collector-flange capacitance

Note

1 Measured under pulse conditions: tp < 200 (is; 8 < 0,02.

Rth j-mb(dc)

Rth j-mb(rf)

r^th mb-h

V(BR) CES

V(BR) CEO

V(BR)EBO

ICES

ESBO

ESBR

HFE

VcEsat

fr

fr

Cof

BLV10

10,7 K/W

8,6 K/W

0,3 K/W

>

36 V

>

18 V

>

4V

<

2 mA

>

0,5 mJ

>

0,5 mJ

typ.

40

1 0 to 1 00

typ.

0,85 V

typ.

950 MHz

typ.

850 MHz

typ.

16,5 pF

typ.

12 pF

typ.

2 pF

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