BSP89 データシートの表示（PDF） - Philips Electronics
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BSP89 Datasheet PDF : 8 Pages
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Philips Semiconductors
N-channel enhancement mode vertical
D-MOS transistor
Product specification
BSP89
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS
IDSS
±IGSS
VGS(th)
RDS(on)
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
Yfs
Ciss
Coss
Crss
transfer admittance
input capacitance
output capacitance
feedback capacitance
Switching times (see Figs 3 and 4)
ton
turn-on time
toff
turn-off time
CONDITIONS
ID = 10 µA; VGS = 0
VDS = 60 V; VGS = 0
±VGS = 20 V; VDS = 0
ID = 1 mA; VGS = VDS
ID = 340 mA; VGS = 10 V
ID = 340 mA; VGS = 4.5 V
ID = 340 mA; VDS = 25 V
VDS = 25 V; VGS = 0; f = 1 MHz
VDS = 25 V; VGS = 0; f = 1 MHz
VDS = 25 V; VGS = 0; f = 1 MHz
ID = 250 mA; VDD = 50 V;
VGS = 0 to 10 V
ID = 250 mA; VDD = 50 V;
VGS = 0 to 10 V
MIN. TYP. MAX. UNIT
240 −
−
V
−
−
200 nA
−
−
100 nA
0.8 −
2
V
−
4
6
Ω
−
−
10 Ω
140 350 −
mS
−
65 140 pF
−
20 30 pF
−
5
9
pF
−
5
10 ns
−
20 30 ns
2
handbook,
Ptot
(W)
1.6
1.2
0.8
0.4
0
0
MBB693
50
100
150
200
Tamb (°C)
handbook, halfpage
VDD = 50 V
10 V
0V
50 Ω
ID
MBB691
Fig.2 Power derating curve.
Fig.3 Switching times test circuit.
April 1995
3
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