BSP89H6327 データシートの表示（PDF） - Infineon Technologies

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BSP89H6327

SIPMOS
Small-Signal-Transistor

Infineon Technologies 

Rev. 2.2

BSP89

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Dynamic Characteristics

Transconductance

gfs

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS³2*ID*RDS(on)max,

ID=0.28A

VGS=0, VDS=25V,

f=1MHz

VDD=120V, VGS=10V,

ID=0.35A, RG=6W

0.18 0.36 - S

-

80 140 pF

- 11.2 16.8

-

5.2 7.8

-

4

6 ns

-

3.5 5.3

- 15.9 23.8

- 18.4 27.6

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Qgs

Qgd

Qg

VDD=192V, ID=0.35A

VDD=192V, ID=0.35A,

VGS=0 to 10V

-

0.2 0.3 nC

-

2

3

-

4.3 6.4

Gate plateau voltage

V(plateau) VDD=192V, ID = 0.35 A

-

3.1

-V

Reverse Diode

Inverse diode continuous

IS

forward current

Inv. diode direct current, pulsed ISM

Inverse diode forward voltage VSD

Reverse recovery time

trr

Reverse recovery charge

Qrr

TA=25°C

VGS=0, IF = IS

VR=120V, IF=lS,

diF/dt=100A/µs

-

- 0.35 A

-

-

1.4

- 0.85 1.2 V

-

67 100 ns

- 123 184 nC

Page 3

2012-11-29

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