ECH8659 データシートの表示（PDF） - ON Semiconductor
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ECH8659 Datasheet PDF : 5 Pages
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ECH8659
Power MOSFET
30V, 24mΩ, 7A, Dual N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
• 4V drive
• Composite type, Facilitating high-density mounting
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
Typical Applications
• LiB Protection Switch
• Motor Drive
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
7
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
40
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm2 × 0.8mm) 1unit
Total Dissipation
When mounted on ceramic substrate
PT
(900mm2 × 0.8mm)
1.3
W
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 × 0.8mm) 1unit
Symbol
RθJA
Value
Unit
96.1 °C/W
www.onsemi.com
VDSS
30V
RDS(on) Max
24mΩ@ 10V
41mΩ@ 4.5V
55mΩ@ 4V
ID Max
7A
ELECTRICAL CONNECTION
N-Channel
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
PACKING TYPE : TL MARKING
TE
Lot No.
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
May 2015 - Rev. 2
Publication Order Number :
ECH8659/D
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