A Product Line of
Diodes Incorporated
FZT696B
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
180
—
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
180
—
Emitter-Base Breakdown Voltage
BVEBO
7
—
Collector-Base Cut-Off Current
Emitter Cut-Off Current
ICBO
—
—
IEBO
—
—
DC Current Gain (Note 11)
500
—
hFE
150
—
—
—
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
—
—
—
—
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Input Capacitance
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Turn-Off Time
VBE(sat)
—
VBE(on)
—
Cibo
—
Cobo
—
fT
130
ton
—
toff
—
—
—
200
6
—
80
4400
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Max
—
—
—
100
100
—
—
200
200
250
0.9
0.9
—
—
—
—
—
Unit
V
V
V
nA
nA
—
—
mV
V
V
pF
pF
MHz
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 140V
VEB = 4V
IC = 100mA, VCE = 5V
IC = 200mA, VCE = 5V
IC = 50mA, IB = 0.5mA
IC = 100mA, IB = 2mA
IC = 200mA, IB = 5mA
IC = 200mA, IB = 50mA
IC = 200mA, VCE = 5V
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
VCE = 5V, IC = 50mA, f=50MHz
VCC = 50V, IC = 100mA
IB1 = -IB2 = 10mA
FZT696B
Document number: DS33159 Rev. 5 - 2
4 of 7
www.diodes.com
June 2015
© Diodes Incorporated