FX20ASJ-06 データシートの表示（PDF） - Renesas Electronics

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FX20ASJ-06

High-Speed Switching Use Pch Power MOS FET

Renesas Electronics 

FX20ASJ-06

Electrical Characteristics

Parameter

Drain-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Reverse recovery time

Symbol

V(BR)DSS

IGSS

IDSS

VGS(th)

rDS(ON)

rDS(ON)

VDS(ON)

| yfs |

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

Rth(ch-c)

trr

Min

–60

—

—

–1.3

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ

—

—

—

–1.8

73

119

–0.73

10.9

2370

306

147

15

37

131

72

–1.0

—

50

Max

—

±0.1

–0.1

–2.3

97

166

–0.97

—

—

—

—

—

—

—

—

–1.5

3.57

—

Unit

V

µA

mA

V

mΩ

mΩ

V

S

pF

pF

pF

ns

ns

ns

ns

V

°C/W

ns

(Tch = 25°C)

Test Conditions

ID = –1 mA, VGS = 0 V

VGS = ±20 V, VDS = 0 V

VDS = –60 V, VGS = 0 V

ID = –1 mA, VDS = –10 V

ID = –10 A, VGS = –10 V

ID = –10 A, VGS = – 4 V

ID = –10 A, VGS = –10 V

ID = –10 A, VDS = –10 V

VDS = –10 V, VGS = 0 V,

f = 1MHz

VDD = –30 V, ID = –10 A,

VGS = –10 V,

RGEN = RGS = 50 Ω

IS = –10 A, VGS = 0 V

Channel to case

IS = –20 A, dis/dt = 100 A/µs

Rev.2.00 Aug 07, 2006 page 2 of 6

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