PUMD2 データシートの表示（PDF） - Philips Electronics
部品番号
コンポーネント説明
メーカー
PUMD2 Datasheet PDF : 10 Pages
| |||
Philips Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
Product specification
PEMD2; PIMD2; PUMD2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Per transistor
Rth(j-a)
thermal resistance from junction to ambient
SOT363
SOT457
SOT666
Per device
Rth(j-a)
thermal resistance from junction to ambient
SOT363
SOT457
SOT666
Tamb ≤ 25 °C
note 1
note 1
notes 1 and 2
Tamb ≤ 25 °C
note 1
note 1
notes 1 and 2
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
VALUE
625
417
625
416
208
416
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per transistor; for the PNP transistor with negative polarity
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = 50 V; IE = 0 A
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
VCE = 5 V; IC = 5 mA
IC = 10 mA; IB = 0.5 mA
VCE = 5 V; IC = 100 µA
VCE = 0.3 V; IC = 5 mA
RR-----21--
resistor ratio
Cc
collector capacitance
TR1 (NPN)
TR2 (PNP)
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
MIN. TYP. MAX. UNIT
−
−
−
−
−
−
−
−
60
−
−
−
−
1.1
2.5 1.7
15.4 22
0.8 1
100 nA
1
µA
50
µA
180 µA
−
150 V
0.8 V
−
V
28.6 kΩ
1.2
−
−
2.5 pF
−
−
3
pF
2004 Apr 21
5
Share Link: 