MJ4035 データシートの表示（PDF） - New Jersey Semiconductor
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MJ4035 Datasheet PDF : 2 Pages
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MJ4030, MJ4031, MJ4032 PNP / MJ4033, MJ4034, MJ4035 NPN
ELECTRICAL CHARACTERISTICS ( Tc = 25*C unless otherwise noted )
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
V
*C\rE ^*O f\m(H +*H mj)
( lc - 100 mA, IB - 0 )
MJ4030.MJ4033
60
MJ4031.MJ4034
80
MJ4032.MJ4035
100
Collector Cutoff Current
( Vci = 30 V, I. = 0 )
(Vci =4QV, l. =0)
( Vci = 50 V, I, = 0 )
'CEO
MJ4030.MJ4033
MJ4031.MJ4034
MJ4032.MJ4035
mA
3.0
3.0
3.0
Collector-Emitter Leakage Current
( Vcl = 60 V, RU = 1.0k ohm )
ICER
MJ4030.MJ4033
(Vc, = 80V, RM" 1.0k ohm)
MJ4031.MJ4034
( Vw= 100V, RM= 1.0k ohm )
MJ4032.MJ4035
(VM = 60V, RM = 1.0k ohm, TC=1SO°C) MJ4030.MJ4033
( Vc< = 80 V, RM « 1.0k ohm , Te = 150°C ) MJ4031.MJ4034
( Vc, = 100 V, RM - 1.0k ohm ,TC = 150°C ) MJ4O32.MJ4035
mA
1.0
1.0
1.0
5.0
5.0
5.0
Emitter Cutoff Current
(VEB = 5.0V,IC=0 )
loo
mA
5.0
ON CHARACTERISTICS (1)
DC Current Gain
(IC=10A,VCE = 3.0V)
hFE
1000
Collector-Emitter Saturation Voltage
(lc=10A,lB = 40mA)
(lc=16A,lB=80mA)
Vcs,^
V
2.5
4.0
Base-Emitter On Voltage
(IC*10A,VCE = 3.0V)
(1) Pulse Test Pulsewidth - 300us, Duty Cycle £ 2.0%
Wo
V
3.0
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