MJD32C データシートの表示（PDF） - Inchange Semiconductor

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MJD32C

Silicon PNP Power Transistors

Inchange Semiconductor 

isc Silicon PNP Power Transistors

INCHANGE Semiconductor

MJD32C

DESCRIPTION

·DC Current Gain -hFE = 25(Min)@ IC= -1A

·Collector-Emitter Breakdown Voltage-

: V(BR) CEO= -100V(Min)

·Complement to Type MJD31C

·DPAK for Surface Mount Applications

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·Designed for use in general purpose amplifier and low speed

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

VCEO

VEBO

IC

ICM

IB

PC

Tj

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Pulse

Base Current

Collector Power Dissipation

TC=25℃

Collector Power Dissipation

Ta=25℃

Junction Temperature

-100

V

-100

V

-5

V

-3

A

-5

A

-1

A

15

W

1.56

150

℃

Tstg

Storage Ttemperature Range

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

8.3 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W

isc Website：www.iscsemi.com

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