NJVMJD128T4G(2012) データシートの表示（PDF） - ON Semiconductor

部品番号

コンポーネント説明

メーカー

NJVMJD128T4G
(Rev.:2012)

Complementary Darlington Power Transistor

ON Semiconductor 

MJD128T4G, NJVMJD128T4G (PNP)

300

TJ = 25C

200

Cob

100

70

Cib

50

30

0.1 0.2

0.5 1 2

5 10 20

VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Capacitance

50 100

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

 D1, MUST BE FAST RECOVERY TYPE, e.g.:

  1N5825 USED ABOVE IB  100 mA

  MSD6100 USED BELOW IB  100 mA

V2

APPROX

TUT

RB

VCC

- 30 V

RC SCOPE

+ 8 V

0

51 D1

 8 k  120

V1

APPROX

-12 V

+4V

25 ms

tr, tf  10 ns

DUTY CYCLE = 1%

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

Figure 9. Switching Times Test Circuit

5

3

ts

2

1

tf

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.1

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25C

0.2 0.3

td @ VBE(off) = 0 V

0.5 0.7 1

2

tr

3 5 7 10

IC, COLLECTOR CURRENT (AMP)

Figure 10. Switching Times

1

0.7 D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1 0.05

0.07 0.01

0.05

0.03 SINGLE PULSE

0.02

0.01

0.01 0.02 0.03 0.05 0.1

RqJC(t) = r(t) RqJC

P(pk)

RqJC = 6.25C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) qJC(t)

t1

t2

DUTY CYCLE, D = t1/t2

0.2 0.3 0.5

1

2 3 5 10

t, TIME OR PULSE WIDTH (ms)

20 30 50

Figure 11. Thermal Response

100 200 300 500 1000

http://onsemi.com

4

Share Link: