MJD128 データシートの表示（PDF） - Inchange Semiconductor

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MJD128

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

isc Silicon PNP Darlington Power Transistor

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -4A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -120V(Min)

·DPAK for Surface Mount Applications

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·Designed for general purpose amplifier and low speed

switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

VCBO

Collector-Base Voltage

-120

VCEO

Collector-Emitter Voltage

-120

VEBO

Emitter-Base Voltage

-5

IC

Collector Current-Continuous

-8

ICM

Collector Current-Peak

-16

IB

Base Current-DC

Collector Power Dissipation

PC

TC=25℃

Collector Power Dissipation

Ta=25℃

Tj

Junction Temperature

-120

20

1.75

150

Tstg

Storage Temperature Range

-65~150

UNIT

V

V

V

A

A

mA

W

℃

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

6.25 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W

isc Product Specification

MJD128

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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