MJF45H11 データシートの表示（PDF） - Inchange Semiconductor

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MJF45H11

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

MJF45H11

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= -1.0V(Max.)@ IC= -8A

·Fast Switching Speeds

·Complement to Type MJF44H11

APPLICATIONS

·Designed for general purpose power amplification and

switching such as output or driver stages in applications

such as switching regulators,converters and power amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

Collector Power Dissipation

@TC=25℃

PC

Collector Power Dissipation

@Ta=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

-20

A

36

W

2

150

℃

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance, Junction to Case

3.5 ℃/W

Thermal Resistance,Junction to Ambient 62.5 ℃/W

isc Website：www.iscsemi.cn

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