MMDT2227G(2014) データシートの表示（PDF） - Unisonic Technologies

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MMDT2227G
(Rev.:2014)

NPN & PNP GENERAL PURPOSE AMPLIFIER

Unisonic Technologies 

MMDT2227

DUAL TRANSISTOR

 ELECTRICAL CHARACTERISTICS(Cont.)

TR2

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO IC=-10mA, IB=0 (Note)

-60

Collector-Base Breakdown Voltage

V(BR)CBO IC=-10 µA, IE=0

-60

Emitter-Base Breakdown Voltage

V(BR)EBO IE=-10µA, IC=0

-5.0

Collector Cutoff Current

ICBO VCB= -50V, IE=0

Emitter Cutoff Current

IEBO VEB=-3.0V, IC=0

ON CHARACTERISTICS

IC=-0.1mA, VCE=-10V

75

IC=-1.0mA, VCE=-10V

100

DC Current Gain

hFE IC=-10mA, VCE=-10V

100

IC=-150mA, VCE= -10V (Note) 100

IC=-500mA, VCE=-10V (Note)

50

Collector-Emitter Saturation Voltage (Note)

VCE(SAT)

IC=-150mA, IB=-15mA

IC=-500mA, IB=-50mA

Base-Emitter Saturation Voltage (Note)

VBE(SAT)

IC=-150mA, IB=-15mA

IC=-500mA, IB=-50mA

SMALL SIGNAL CHARACTERISTICS

Current Gain - Bandwidth Product

Output Capacitance

fT

IC= -50mA,VCE=-20V,f =100MHz 200

COB VCB=-10V, IE=0, f=100 kHz

Input Capacitance

Noise Figure

CIB VEB=-2.0V, IC=0, f=100 kHz

NF

IC=-100µA, VCE=-10V,

RS=-1.0kΩ, f =1.0kHz

Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

TYP

2.0

MAX UNIT

V

V

V

-20 nA

-30 nA

300

-0.4 V

-1.6 V

-1.3 V

-2.6 V

MHz

8 pF

30 pF

dB

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 5

QW-R218-019.D

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